Semiconductor structure having deep trench capacitor and method of manufacturing thereof

A method of manufacturing a semiconductor structure, comprising:

• forming a recess on a surface of a substrate;
• disposing an isolation layer on the surface and extending into the recess;
• forming a capacitor structure at least partially disposed within the recess, wherein the formation of the capacitor structure includes:
• disposing a first electrode layer over the isolation layer;
• disposing a first dielectric over the first electrode layer;
• and
• disposing a second electrode layer to cover and surround the first dielectric and the first electrode layer;
• and
• forming an interconnect structure disposed over and electrically connected to the capacitor structure.

A semiconductor structure, comprising:

• a substrate including a recess indented into the substrate;
• a capacitor structure at least partially disposed within and conformal to the recess, and
• an interconnect structure disposed over and electrically connected to the capacitor structure, and
• an isolation layer,
• wherein the capacitor structure includes a first electrode layer, a second electrode layer over the first electrode layer, and a third electrode layer disposed over the second electrode layer and the first electrode layer,
• wherein the first electrode layer and the second electrode layer are separated by a first dielectric, and the second electrode layer and the third electrode layer are separated by a second dielectric,
• wherein the isolation layer is disposed between the first electrode layer and the substrate, and
• wherein the first electrode layer is enclosed by the first dielectric and the isolation layer.