Semiconductor device

A semiconductor device comprising:

• a substrate;
• a lower electrode on the substrate;
• a first lower interfacial film on the lower electrode and in contact with the lower electrode and including a nitride of a first metal element;
• a dielectric film on the first lower interfacial film;
• a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film;
• a first upper interfacial film on the dielectric film and including the nitride of the first metal element;
• an upper electrode on the first upper interfacial film;
• and
• a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film,
• wherein the first upper interfacial film is in contact with the upper electrode,
• wherein an electronegativity of the first metal element is greater than an electronegativity of a second metal element included in the dielectric film, and
• wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element.

A semiconductor device comprising:

• a substrate;
• the substrate defining a trench;
• a gate electrode filling a portion of the trench;
• a buried contact on at least one side of the gate electrode and connected to the substrate;
• a landing pad on the buried contact;
• and
• a capacitor connected to the landing pad,
• wherein the capacitor includes,
• a lower electrode on the substrate,
• a first lower interfacial film on the lower electrode and in contact with the lower electrode,
• a dielectric film on the lower interfacial film,
• a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film,
• a first upper interfacial film on the dielectric film,
• a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film, and
• an upper electrode on the first upper interfacial film,
• wherein the first upper interfacial film is in contact with the upper electrode,
• wherein the upper and lower electrodes include a same conductive material,
• wherein the first lower interfacial film is a single film and the first upper interfacial film is a single film, and the first lower interfacial film and the first upper interfacial film include a same first metal element,
• wherein an electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than an electronegativity of a second metal element included in the dielectric film, and
• wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element.