Semiconductor device with conductive layers in isolation structures

A semiconductor device, comprising:

• a cell region including a plurality of gate electrode layers stacked in a first direction perpendicular to an upper surface of a substrate and a plurality of first isolation structures extending in a second direction parallel to the upper surface of the substrate and dividing the plurality of gate electrode layers into a plurality of blocks;
• and
• a peripheral circuit region including a row decoder connected to the plurality of gate electrode layers,
• wherein each of the plurality of blocks includes at least one second isolation structure extending in the second direction and having a conductive layer connected to the row decoder, and
• wherein the row decoder is configured to generate heat in the conductive layer by applying a current to the at least one second isolation structure included in a selected block among the plurality of blocks.

A semiconductor device, comprising:

• a substrate;
• a plurality of gate electrode layers stacked in a first direction perpendicular to an upper surface of the substrate;
• a plurality of channel structures extending in the first direction through the plurality of gate electrode layers, and each of the plurality of channel structures including a channel layer connected to the substrate;
• and
• a plurality of isolation structures extending in a second direction parallel to the upper surface of the substrate and arranged in a third direction intersecting the second direction,
• wherein a pair of isolation structures most adjacent to each other in the third direction, among the plurality of isolation structures, includes a first isolation structure and a second isolation structure,
• the first isolation structure includes only a first insulating layer and is free of a conductive layer, and
• the second isolation structure includes both a second insulating layer and the conductive layer, and
• a length of the first isolation structure in the second direction is greater than a length of the second isolation structure in the second direction.