Semiconductor device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorsHyun Sub Kim, Sun Woo Kim, Jin Ho Bin
Life of this patent
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Abstract
A semiconductor device may include a gate structure, a channel structure extending through the gate structure, a first hydrogen supply layer disposed on the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy, and a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.
Claims14
A semiconductor device comprising:
- a gate structure comprising insulating layers and conductive layers that are alternately stacked;
- a channel structure extending through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer;
- a first hydrogen supply layer disposed over the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy;
- and
- a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.
A semiconductor device comprising:
- a gate structure comprising insulating layers and conductive layers that are alternately stacked;
- a channel structure extending through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer;
- a first hydrogen supply layer disposed over the gate structure and having a first hydrogen concentration;
- a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration;
- and
- a second hydrogen supply layer disposed between the first hydrogen supply layer and the hydrogen blocking layer and having a third hydrogen concentration higher than the second hydrogen concentration.
A semiconductor device comprising:
- a gate structure comprising insulating layers and conductive layers that are alternately stacked;
- a plurality of channel structures passing through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer;
- a first hydrogen supply layer disposed over the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy;
- and
- a second hydrogen supply layer disposed on the first hydrogen supply layer,
- wherein the second hydrogen supply layer comprises an oxygen vacancy.
The semiconductor device of 11, further comprising:
- a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.
The semiconductor device of 12, wherein the second hydrogen supply layer having a third hydrogen concentration higher than the second hydrogen concentration.
The semiconductor device of 12, wherein the first hydrogen supply layer comprises oxide or nitride, the second hydrogen supply layer comprises oxide or nitride, and the hydrogen blocking layer comprises nitride.
Dependencies are inferred from the claim text.