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US 12,604,471 B2Granted
Semiconductor memory device and manufacturing method of semiconductor memory device
AssigneeSK hynix Inc.
InventorKun Young Lee
Life of this patent
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Abstract
There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device may include a stack structure including a plurality of conductive layers, a hole formed in the stack structure, a memory layer allowing a first part and a second part of the hole to be spaced apart from each other in the hole, and a first channel layer disposed in the first part of the hole and a second channel layer disposed in the second part of the hole.
Claims19
A semiconductor memory device comprising:
- a stack structure including a plurality of conductive layers, each of the plurality of conductive layers having a surface facing a first direction and the plurality of conductive layers being spaced apart from each other in the first direction;
- a hole formed in the stack structure, the hole including a first part and second part that are adjacent to each other in a second direction that is perpendicular to the first direction, wherein the hole has a width that is narrower closer to a connection point between the first part and the second part;
- a first channel layer in the first part of the hole;
- a second channel layer in the second part of the hole;
- and
- a memory layer interposed between the first channel layer and the second channel layer and extending into a space between the stack structure and each of the first and second channel layers, and
- wherein the memory layer separates the first and second channel layers.
4 more elements
A semiconductor memory device comprising:
- a stack structure including a plurality of conductive layers that are spaced apart from each other;
- a butterfly-shaped hole formed in the stack structure;
- a memory layer extending along a sidewall of the butterfly-shaped hole, the memory layer isolating a first region and a second region in the butterfly-shaped hole;
- a first channel layer in the first region;
- and
- a second channel layer in the second region, and
- wherein the memory layer separates the first and second channel layers.
4 more elements
Dependencies are inferred from the claim text.