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US 12,604,470 B2Granted
Memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsWon Geun Choi, Mi Seong Park, Jung Shik Jang
Life of this patent
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Abstract
A memory device, and a method of manufacturing the same, includes a stack structure and main plugs passing through the stack structure, the main plugs being spaced apart from each other in a first direction. The memory device also includes a separation pattern separating the main plugs in a second direction and a slit pattern separating the stack structure into first and second memory blocks, the slit pattern having an ellipse shape.
Claims15
A memory device comprising:
- a stack structure;
- main plugs passing through the stack structure and arranged to be spaced apart from each other in a first direction;
- a separation pattern separating the main plugs in a second direction;
- and
- a slit pattern separating the stack structure into first and second memory blocks, the slit pattern having an elliptical shape,
- wherein a width of the slit pattern is substantially the same as a width of the separation pattern.
3 more elements
A memory device comprising:
- a stack structure disposed over a source line;
- main plugs passing through the stack structure and arranged to be spaced apart from each other in a first direction;
- separation patterns separating the main plugs in a second direction;
- and
- a slit separating the stack structure into first and second memory blocks, the slit comprising slit patterns having an elliptical shape,
- wherein a width of at least one of the slit patterns is substantially the same as a width of at least one of the separation patterns.
3 more elements
Dependencies are inferred from the claim text.