Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a trench inside a substrate extending in a first direction and a second direction, perpendicular to the first direction;
• a gate electrode that fills a part of the trench;
• a storage contact which is disposed on at least one side of the gate electrode and connected to the substrate;
• a first pad on the storage contact;
• an etching stop film disposed on and covering a portion of the first pad;
• a lower electrode which penetrates the etching stop film and is connected to the first pad;
• a first supporter layer disposed on a side wall of the lower electrode and spaced apart, in a third direction perpendicular to the first and second directions, from the etching stop film;
• a second supporter layer disposed on the first supporter layer and spaced apart, in the third direction, from the first supporter layer;
• a third supporter layer disposed on the second supporter layer and spaced apart, in the third direction, from the second supporter layer;
• a dielectric film which extends along an upper surface and a side wall of the lower electrode, and upper surfaces and lower surfaces of the first to third supporter layers;
• and
• an upper electrode disposed on the dielectric film,
• wherein the side wall of the lower electrode between the first supporter layer and the second supporter layer includes a first lower portion and a first upper portion on the first lower portion,
• wherein the side wall of the lower electrode between the second supporter layer and the third supporter layer includes a second lower portion and a second upper portion on the second lower portion,
• wherein at least one of the first upper portion and the second lower portion includes a plurality of protrusions protruding from the side wall of the lower electrode, and
• wherein the second upper portion and the first lower portion are flat.

A semiconductor device comprising:

• a first pad disposed on a substrate extending in a first direction and a second direction, perpendicular to the first direction;
• a lower electrode connected to and disposed on the first pad;
• a first supporter layer, a second supporter layer, and a third supporter layer each disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction;
• a dielectric film disposed on the lower electrode and the first, second, and third supporter layers;
• and
• an upper electrode disposed on the dielectric film,
• wherein at least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions, and
• wherein the side wall of the lower electrode between the first pad and the first supporter layer is flat.