Apparatuses and techniques for cleaning a multi-station semiconductor processing chamber

A system for semiconductor processing, the system comprising:

• a multi-station processing chamber that comprises:
• a plurality of side walls and a top that at least partially define a chamber interior,
• a plurality of processing stations within the chamber interior that each include a substrate support structure configured to support a substrate,
• a hub having a plurality of channels in a top surface of the hub, the hub located in a center area of the chamber interior,
• a hub positioning mechanism configured to rotate the hub about a center axis, and
• a cleaning chemistry inlet configured to direct a flow of a cleaning chemistry into the chamber interior and onto the top surface of the hub;
• a remote cleaning chemistry source fluidically connected to the cleaning chemistry inlet and configured to flow the cleaning chemistry to the cleaning chemistry inlet;
• and
• a controller having at least one processor and at least one memory, wherein the at least one memory stores instructions which, when executed by the at least one processor, cause the at least one processor to:
• cause, while the hub is at a first angular position with respect to the center axis, the cleaning chemistry to flow from the remote cleaning chemistry source through the cleaning chemistry inlet and onto the top surface of the hub, thereby causing the cleaning chemistry to flow through at least some channels of the plurality of channels and into a plurality of first regions within the chamber interior, wherein each channel of the at least some channels directs the cleaning chemistry flow into one corresponding first region;
• cause, after the cleaning chemistry is flowed onto the hub while the hub is at the first angular position, the hub positioning mechanism to rotate the hub by a first angle to a second angular position with respect to the center axis;
• and
• cause, while the hub is at the second angular position, the cleaning chemistry to flow through cleaning chemistry inlet and onto the top surface of the hub, thereby causing the cleaning chemistry to flow through at least some channels of the plurality of channels and into a plurality of second regions within the chamber interior, wherein each channel of the at least some channels directs the cleaning chemistry flow into one corresponding second region.

A multi-station semiconductor processing system comprising:

• a chamber having a plurality of processing stations within a chamber interior of the chamber;
• a structure located in the chamber interior and configured to be moveable along a vertical center axis;
• a cleaning chemistry inlet configured to direct a cleaning chemistry from a remote source into the chamber interior and onto the structure;
• and
• a controller having at least one processor and at least one memory, wherein:
• the at least one memory stores instructions which, when executed by the at least one processor, cause the at least one processor to:
• cause, while the structure is at a first elevational position with respect to the cleaning chemistry inlet, the cleaning chemistry to flow from the remote source through the cleaning chemistry inlet and onto the structure, thereby causing the cleaning chemistry to be directed along a first outward direction;
• cause the structure to move from the first elevational position to a second elevational position;
• and
• cause, while the structure is at the second elevational position with respect to the cleaning chemistry inlet, the cleaning chemistry to flow from the remote source through the cleaning chemistry inlet and onto the structure, thereby causing the cleaning chemistry to be directed along a second outward direction, wherein the first outward direction and the second outward direction are different.