Conductive member for cleaning focus ring of a plasma processing apparatus
AssigneesBeijing E-Town Semiconductor Technology Co., Ltd., Mattson Technology, Inc.
InventorsMaolin Long, Changle Guan
Life of this patent
Estimating the term…
Abstract
A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.
Claims12
A pedestal assembly comprising:
- an electrostatic chuck configured to support a workpiece, the electrostatic chuck defining a plurality of stepped surfaces, each of the plurality of stepped surfaces comprises a different horizontal depth;
- a focus ring having a top surface and a bottom surface, the focus ring configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck;
- an inner insulator ring configured to surround a portion of a periphery of the electrostatic chuck;
- an outer insulator ring configured to surround a periphery of the inner insulator ring, the electrostatic chuck, and a conductive member, the focus ring being on the outer insulator ring such that the bottom surface of the focus ring is on a top surface of the outer insulator ring;
- and
- the conductive member positioned vertically between at least a portion of the bottom surface of the focus ring, a top surface of the inner insulator ring, and positioned horizontally between a portion of the inner insulator ring and the outer insulator ring, the conductive member is spaced apart from the periphery of the electrostatic chuck along a first axis by a first distance and the conductive member is spaced apart from the periphery of the electrostatic chuck along a second axis by a second distance, the first axis intersecting with the second axis in a plane, and the first axis and the second axis forming an angle that differs from 90 degrees by less than 15 degrees.
A plasma processing apparatus comprising:
- a processing chamber;
- and
- a pedestal assembly disposed within the processing chamber, the pedestal assembly comprising:
- an electrostatic chuck configured to support a workpiece, the electrostatic chuck defining a plurality of stepped surfaces, each of the plurality of stepped surfaces comprises a different horizontal depth;
- a focus ring having a top surface and a bottom surface, the focus ring configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck;
- an inner insulator ring configured to surround a portion of a periphery of the electrostatic chuck;
- an outer insulator ring configured to surround a periphery of the inner insulator ring, the electrostatic chuck, and a conductive member, the focus ring being on the outer insulator ring such that the bottom surface of the focus ring is on a top surface of the outer insulator ring;
- and
- the conductive member positioned vertically between at least a portion of the bottom surface of the focus ring, a top surface of the inner insulator ring, and positioned horizontally between a portion of the inner insulator ring and the outer insulator ring, the conductive member is spaced apart from the periphery of the electrostatic chuck along a first axis by a first distance and the conductive member is spaced apart from the periphery of the electrostatic chuck along a second axis by a second distance, the first axis intersecting with the second axis in a plane, and the first axis and the second axis forming an angle that differs from 90 degrees by less than 15 degrees.
Dependencies are inferred from the claim text.