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US 12,603,254 B2Granted
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsAkira Nakagawa, Kenji Komatsu, Kazuma Kamimura, Tsukasa Hirayama
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Abstract
A substrate etching method performed by using a plasma processing apparatus includes: providing a substrate including a silicon-containing film to a substrate support; periodically supplying, to the substrate support, bias RF power of 20 KW to 50 kW at a duty ratio of 5% to 50%; and etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gas.
Claims16
An etching method comprising:
- (A) providing a substrate including a silicon-containing film on a substrate support;
- (B) periodically supplying, to the substrate support, bias RF power of 20 kW to 50 kW at a duty ratio of 5% to 50%;
- and
- (C) etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gas.
1 more element
An etching method comprising:
- (A) providing a substrate including a silicon-containing film on a substrate support;
- (B) supplying, to the substrate support, electrical bias of 7 kV to 20 kV at a duty ratio of 5% to 50%;
- and
- (C) etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gas.
1 more element
Dependencies are inferred from the claim text.