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US 12,603,251 B2Granted
Hybrid chamber
AssigneeTes Co., Ltd
InventorsJae-Woo Kim, Sang-Woo Cho
Life of this patent
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Abstract
The present invention relates to a hybrid chamber, and more specifically, to a hybrid chamber capable of performing both a gas phase etching (GPE) process for removing oxide from a substrate and a radical dry cleaning (RDC) process for removing nitride from the substrate in one chamber.
Claims12
A hybrid chamber comprising:
- a chamber unit providing a processing space for a substrate,
- wherein the chamber unit comprises:
- a first chamber body;
- a second chamber body rotatably coupled to the first chamber body;
- and
- a third chamber body rotatably coupled to the second chamber body;
- a heat exchange plate provided in an upper portion of the third chamber body;
- a gas supply unit provided in an upper portion of the third chamber body to supply at least one of process gas and plasma toward the substrate;
- and
- a lamp unit embedded in a sidewall of the second chamber body provided in the chamber unit to heat the substrate,
- wherein the gas supply unit comprises:
- a gas inflow device formed to protrude from the heat exchange plate into which at least two process gases are introduced through gas inlets facing each other;
- a first showerhead coupled to the third chamber body for dispersing the process gases below the gas inflow device;
- and
- a second showerhead coupled to an upper portion of the sidewall of the second chamber body to form a plasma space with the first showerhead and to supply at least one of the process gases and plasma toward the substrate,
- wherein the lamp unit comprises:
- a recess embedded in a lower portion of the sidewall of the second chamber body;
- a lamp disposed in the recess;
- and
- a transparent window blocking the recess from the processing space,
- wherein the transparent window is flushed with an inner surface of the sidewall of the second chamber body.
18 more elements
A hybrid chamber comprising:
- a chamber unit providing a processing space for a substrate, wherein the chamber unit comprises:
- a first chamber body;
- a second chamber body rotatably coupled to the first chamber body;
- and
- a third chamber body rotatably coupled to the second chamber body;
- a heat exchange plate provided in an upper portion of the third chamber body;
- a gas supply unit provided in an upper portion of the third chamber body to supply at least one of process gas and plasma toward the substrate;
- and
- a lamp unit coupled to the second chamber body to heat the substrate,
- wherein the gas supply unit comprises:
- a gas inflow device formed to protrude from the heat exchange plate into which at least two process gases are introduced through gas inlets facing each other;
- a first showerhead coupled to the third chamber body for dispersing the process gases below the gas inflow device;
- and
- a second showerhead coupled to an upper portion of the second chamber body to form a plasma space with the first showerhead and to supply at least one of the process gases and plasma toward the substrate,
- wherein the lamp unit comprises:
- a tube coupled to a lower portion of the second chamber body;
- and
- a lamp arranged inside of the tube.
15 more elements
Dependencies are inferred from the claim text.