Memory system and operating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsMinkyeong Choi, Joonsuc Jang, Ji-Sang Lee
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Abstract
A memory system includes: a memory device including a memory cell array and a control circuit; and a temperature sensor configured to measure a temperature of the memory device to generate a temperature value, wherein the control circuit is configured to: set a compensation sensing parameter based on the temperature value, determine a sensing parameter by applying the compensation sensing parameter to a basic sensing parameter corresponding to a read mode among a plurality of read modes having different read speeds, and read data from the memory cell array based on the sensing parameter.
Claims20
A memory system comprising:
- a memory device comprising a memory cell array and a control circuit;
- and
- a temperature sensor configured to measure a temperature of the memory device to generate a temperature value,
- wherein the control circuit is configured to:
- set a compensation sensing parameter based on the temperature value,
- determine a sensing parameter by applying the compensation sensing parameter to a basic sensing parameter corresponding to a read mode among a plurality of read modes having different read speeds, wherein the basic sensing parameter is preset in the memory device and/or the control circuit according to a read speed, and
- read data from the memory cell array based on the sensing parameter.
A memory system comprising:
- a memory device comprising a memory cell array and a control circuit;
- a memory controller configured to determine a read mode among a plurality of read modes associated with different read speeds based on a reliability index of the memory device;
- and
- a temperature sensor configured to measure a temperature of the memory device to generate a temperature value,
- wherein the control circuit is configured to:
- set a compensation sensing parameter based on the temperature value,
- determine a sensing parameter by applying the compensation sensing parameter to a basic sensing parameter corresponding to the read mode, and
- read data from the memory cell array based on the sensing parameter.
An operating method of a memory system, the operating method comprising:
- receiving, by a memory controller, a read command for a memory device, wherein the memory device comprises a memory cell array;
- determining, by the memory controller, a reliability of the memory device;
- determining, by the memory controller, a read mode of the memory device among a plurality of read modes having different read speeds based on the reliability;
- setting, by the memory device, a compensation sensing parameter based on a temperature and the read mode of the memory device;
- and
- reading, by the memory device, data corresponding to the read command based on a basic sensing parameter corresponding to the read mode and the compensation sensing parameter.
Dependencies are inferred from the claim text.