Non-volatile memory with high performance read

A non-volatile storage apparatus, comprising:

• a non-volatile memory structure including non-volatile memory cells and word lines connected to the non-volatile memory cells;
• and
• a control circuit connected to the non-volatile memory structure, the control circuit is configured to:
• perform a pre-read sensing operation to determine conditions of neighbor memory cells connected to neighbor word lines, the neighbor word lines are adjacent to a selected word line, a set of selected memory cells are connected to the selected word line,
• apply a first word line voltage associated with a first programmed data state to the selected word line,
• while applying the first word line voltage, perform two sensing operations for the first programmed data state on selected memory cells that have neighbor memory cells on the neighbor word lines in a first condition, the two sensing operations include a sensing operation for a hard bit of data and a sensing operation for a soft bit of data for selected memory cells that have neighbor memory cells on the neighbor word lines in the first condition,
• while applying the first word line voltage, perform two sensing operations for the first programmed data state on selected memory cells that have neighbor memory cells on the neighbor word lines in a second condition, the two sensing operations include a sensing operation for a hard bit of data and a sensing operation for a soft bit of data for selected memory cells that have neighbor memory cells on the neighbor word lines in the first condition, and
• determine data being stored in the set of selected memory cells based on the two sensing operations for the first programmed data state on selected memory cells that have neighbor memory cells on the neighbor word lines in the first condition and the two sensing operations for the first programmed data state on selected memory cells that have neighbor memory cells on the neighbor word lines in the second condition.

A method, comprising:

• performing a sensing operation for memory cells connected to one or more neighbor word lines, the neighbor word lines are adjacent to a selected word line for reading;
• classifying each selected memory cell of a set of selected memory cells connected to the selected word line into a category of a set of two or more categories based on the sensing operation for memory cells connected to one or more neighbor word lines;
• applying a first word line voltage associated with a first programmed data state to the selected word line;
• performing at least three sensing operations while applying the first word line voltage including performing two or more sensing operations for each category for the first programmed data state;
• and
• determining data being stored in the set of selected memory cells based on the two or more sensing operations for each category for the first programmed data state.