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US 12,603,034 B2Granted
CMOS circuit
AssigneeMagnolia White Corporation
InventorKenji Harada
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a CMOS circuit includes a p-channel type transistor including a polycrystalline silicon layer and an n-channel type transistor including an oxide semiconductor layer, and the p-channel transistor and the n-channel transistor are complementarily connected to each other, and the polycrystalline silicon layer and the oxide semiconductor layer overlap each other in plan view.
Claims4
A CMOS circuit comprising:
- a p-channel type transistor including a polycrystalline silicon layer;
- and
- an n-channel type transistor including an oxide semiconductor layer, wherein
- the p-channel transistor and the n-channel transistor are complementarily connected to each other,
- the polycrystalline silicon layer and the oxide semiconductor layer overlap each other in plan view,
- the CMOS circuit is an inverter comprising one of the p-channel type transistor and one of the n-channel type transistor,
- a first drain electrode of the p-channel transistor is connected to the polycrystalline silicon layer,
- a second drain electrode of the n-channel transistor is connected to the oxide semiconductor layer and the first drain electrode, and
- a gate electrode of the p-channel transistor and a gate electrode of the n-channel transistor overlap each other in plan view.
6 more elements
A CMOS comprising:
- a p-channel type transistor including a polycrystalline silicon layer;
- and
- an n-channel type transistor including an oxide semiconductor layer, wherein
- the p-channel transistor and the n-channel transistor are complementarily connected to each other,
- the polycrystalline silicon layer and the oxide semiconductor layer overlap each other in plan view,
- the CMOS circuit is an inverter comprising one of the p-channel type transistor and one of the n-channel type transistor,
- a drain electrode of the n-channel transistor is connected to the oxide semiconductor layer and the polycrystalline silicon layer, and
- a gate electrode of the p-channel transistor and a gate electrode of the n-channel transistor overlap each other in plan view.
5 more elements
Dependencies are inferred from the claim text.