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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZhe Luo, Da Li, Feng Xu, Yaoyao Tian, Jianquan Jia, Xiangnan Zhao
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The present disclosure provides a method for performing a programming operation on a memory cell connected to a bit line and controlled by a word line. The method includes applying a first programming voltage signal to the word line to program the memory cell into a first state, applying a first voltage to the bit line, performing a verify operation when the memory cell is in a second state, determining a classification of the memory cell based on the verify operation, applying a second voltage to the bit line based on the determined classification, applying a second programming voltage signal to the word line to program the memory cell into the first state, applying a third voltage to the bit line, applying a third programming voltage signal to the word line to program the memory cell into the first state, and applying a fourth voltage to the bit line.
A method of programming a memory device, the method comprising:
A memory device, comprising:
A storage system, comprising:
Dependencies are inferred from the claim text.