Compositions for reducing resist consumption of extreme ultraviolet metallic type resist

A method for forming a semiconductor structure, comprising:

• depositing a material layer over a substrate;
• forming a layer of a reducing resist consumption (RRC) composition on the material layer;
• forming a photoresist layer comprising a metal-containing material on the RRC composition layer;
• patterning the photoresist layer to form a patterned photoresist layer;
• and
• etching the material layer using the patterned photoresist layer as an etch mask,
• wherein the RRC composition comprises:
• a solvent having the following Hansen solubility parameters:
• a dispersion parameter between 10 and 25,
• a polarity parameter between 3 and 25, and
• a hydrogen bonding parameter between 4 and 30;
• and
• an acid having an acid dissociation constant between −20 and 6.8, or a base having an acid dissociation constant between 7.2 and 45;
• and
• wherein the RRC composition further comprises a chelating agent.

A method for forming a semiconductor structure, comprising:

• depositing a material layer over a substrate;
• forming a layer of a reducing resist consumption (RRC) composition on the material layer;
• forming a photoresist layer comprising a metal-containing material on the RRC composition layer;
• exposing the photoresist layer to an extreme ultraviolet (EUV) radiation to form a patterned photoresist layer;
• and
• etching the material layer using the patterned photoresist layer as an etch mask,
• wherein the RRC composition comprises:
• a first solvent having a hydrogen bonding parameter between 4 and 30;
• an acid having an acid dissociation constant between −20 and 6.8 or a base having an acid dissociation constant between 7.2 and 45;
• a chelating agent;
• a surfactant;
• a second solvent having a boiling point greater than 150° C.;
• and
• an aqueous solvent;
• or water.