Ion-sensitive field-effect transistors with local-field bias
AssigneeGlobalFoundries U.S. Inc.
InventorsJudson Holt, Bartlomiej Jan Pawlak, Vibhor Jain
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Abstract
Structures for an ion-sensitive field-effect transistor and methods of forming same. The structure comprises a semiconductor substrate, a microfluidic channel above the semiconductor substrate, a semiconductor layer including a portion positioned as a sensing layer in the microfluidic channel, a first electrical connection coupled to the portion of the semiconductor layer, and a second electrical connection coupled to the semiconductor substrate. The portion of the semiconductor layer is spaced above the semiconductor substrate.
Claims15
A structure for a sensor device, the structure comprising:
- a semiconductor substrate including a top surface;
- a microfluidic channel above the semiconductor substrate;
- a well in the semiconductor substrate beneath the microfluidic channel, the well comprising a semiconductor material having an opposite conductivity type from the semiconductor substrate;
- a semiconductor layer including a first portion positioned as a sensing layer in the microfluidic channel, the first portion of the semiconductor layer spaced above the semiconductor substrate;
- a gate structure including a gate electrode and a gate dielectric layer that are positioned on the top surface of the semiconductor substrate, the gate structure extending transversely across the first portion of the semiconductor layer;
- an electrode positioned over the first portion of the semiconductor layer;
- a first dielectric layer;
- a first electrical connection coupled to the first portion of the semiconductor layer;
- and
- a second electrical connection including a contact in the first dielectric layer at a periphery of the microfluidic channel, the contact physically and electrically coupled to the semiconductor substrate,
- wherein the contact is included in the second electrical connection for applying a bias voltage between the semiconductor substrate and the electrode.
A method of forming a structure for a sensor device, the method comprising:
- forming a microfluidic channel above a semiconductor substrate;
- forming a well in the semiconductor substrate beneath the microfluidic channel, wherein the well comprises a semiconductor material having an opposite conductivity type from the semiconductor substrate;
- forming a portion of a semiconductor layer positioned as a sensing layer in the microfluidic channel, wherein the portion of the semiconductor layer is spaced above the semiconductor substrate;
- forming a gate structure including a gate electrode and a gate dielectric layer that are positioned on a top surface of the semiconductor substrate, wherein the gate structure extends transversely across the portion of the semiconductor layer;
- forming an electrode positioned over the portion of the semiconductor layer;
- forming a dielectric layer;
- forming a first electrical connection coupled to the portion of the semiconductor layer;
- and
- forming a second electrical connection including a contact in the dielectric layer at a periphery of the microfluidic channel, wherein the contact is physically and electrically coupled to the semiconductor substrate, and the contact is included in the second electrical connection for applying a bias voltage between the semiconductor substrate and the electrode.
Dependencies are inferred from the claim text.