Method of depositing atomic layer

A method of depositing an atomic layer, the method comprising:

• a plurality of deposition cycles,
• wherein each of the plurality of deposition cycles comprises
• rotating a valve plate included in an exhaust port by a first angle while adsorbing a precursor onto a chamber into which a substrate is loaded,
• rotating the valve plate by a second angle while purging and removing a portion of the precursor which is not adsorbed onto the substrate, based on a purge gas,
• rotating the valve plate by a third angle while adsorbing a reactor onto a surface of the substrate in the chamber, and
• rotating the valve plate by a fourth angle while purging and removing a portion of the reactor which is not adsorbed onto the substrate, based on the purge gas,
• wherein the first angle, the second angle, the third angle, and the fourth angle are angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and
• wherein the third angle differs from the first angle and the fourth angle differs from the second angle.

A method of depositing an atomic layer, the method comprising:

• a plurality of deposition cycles,
• wherein each of the plurality of deposition cycles comprises
• rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber, into which a substrate is loaded, in a pulse form for 0.01 sec to 5 sec,
• rotating the valve plate by a second angle while supplying a first purge gas including at least one of a hydrogen gas and a nitrogen gas to the chamber,
• rotating the valve plate by a third angle while supplying a reactor to the chamber in the pulse form for 0.01 sec to 5 sec, and
• rotating the valve plate by a fourth angle while supplying a second purge gas including at least one of the hydrogen gas and the nitrogen gas to the chamber,
• in the rotating of the valve plate by the first angle, pressure of the chamber is within a range of 0.1 Torr to 30 Torr,
• the precursor includes at least one of TiCl4, Ti(NEt2)4, Ti(NEtMe)4, WF6, WCl6 MoCl2H2, MoCl5, and Mo(CO)6,
• the first angle, the second angle, the third angle, and the fourth angle are angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port,
• a time for which the first purge gas is supplied to the chamber is longer than a time for which the precursor is supplied to the chamber, and
• the first angle differs from the second angle and the third angle, and the second angle is greater than the first angle.