Oxidation resistant protective layer in chamber conditioning

A method for conditioning a substrate processing chamber, the method comprising:

• depositing, in a substrate processing chamber, a preconditioning film by atomic layer deposition (ALD) onto internal surfaces of the substrate processing chamber,
• depositing a multi-layer composite protective film onto the preconditioning film of the substrate processing chamber, comprising:
• depositing, in the substrate processing chamber and without a wafer inside the substrate processing chamber, a silicon oxycarbide (SiCO) layer by remote plasma chemical vapor deposition (RPCVD) onto the internal surfaces of the substrate processing chamber;
• and
• depositing, in the substrate processing chamber and without a wafer inside the substrate processing chamber, a protective layer by chemical vapor deposition (CVD) onto the SiCO layer, wherein the protective layer comprises silicon, oxygen, and carbon, and has a different carbon content than the SiCO layer.