Film forming method and film forming apparatus

A film forming apparatus comprising:

• a processing container configured to accommodate a substrate having a recess formed in a surface thereof;
• a gas supplier configured to supply a raw material gas, a reaction gas, and a plasma generation gas into the processing container;
• an RF power supplier configured to generate plasma;
• and
• a controller,
• wherein the plasma generation gas includes a hydrogen gas and a noble gas, and
• wherein the controller is configured to control the gas supplier and the RF power supplier so as to execute:
• (a) adsorbing the raw material gas into the recess;
• (b) forming a film by reacting the reaction gas with the raw material gas;
• and
• (c) activating the plasma generation gas by plasma and supplying the plasma generation gas into the recess to shrink the film, and
• wherein the controller is configured to control the gas supplier and the RF power supplier so that a plurality of cycles each including (a) and (b) are executed and at least a part of the plurality of cycles includes (c).