US 12,599,030 B2Granted

Power semiconductor module system and method for producing the power semiconductor module system

AssigneeSiemens Aktiengesellschaft

InventorsRoland Lorz, Philipp Kneißl

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Abstract

A method for producing a power semiconductor module system includes producing a first and second power semiconductor modules that each have a power semiconductor circuit, connecting first and second contact electrodes to the respective power semiconductor circuits, and partially enclosing the power semiconductor modules in a common housing, wherein the first and second contact electrodes of the two power semiconductor modules are each led through the common housing through a cut-out and where the common housing has first, second and third contacting regions, where the first and second contact electrodes of the first power semiconductor module contact together in the first contacting region, the first and second contact electrodes of the second power semiconductor module contact together in the second contacting region, the second contact electrode of the first power semiconductor module and the second contact electrode of the second power semiconductor module contact together in the third contacting region.

Claims14

Dependent claims

A power semiconductor module system, comprising:

a first power semiconductor module;
a second power semiconductor module;
and
a common housing;
wherein each power semiconductor module includes a power semiconductor circuit;
wherein the common housing at least partially surrounds the power semiconductor circuits;
wherein each power semiconductor module includes a first contact electrode and a second contact electrode, the first and second contact electrode each being electrically conductively connected to the power semiconductor circuit and each being outwardly guided through the common housing through a recess in the housing;
wherein the common housing includes a first contacting region, a second contacting region and a third contacting region;
wherein the first contact electrode and the second contact electrode of the first power semiconductor module are contactable together in the first contacting region;
wherein the first contact electrode and the second contact electrode of the second power semiconductor module are contactable together in the second contacting region;
and
wherein the second contact electrode of the first power semiconductor module and the second contact electrode of the second power semiconductor module are contactable together in the third contacting region.

9 more elements

A method for producing a power semiconductor module system, comprising:

a) producing a first power semiconductor module and a second power semiconductor module, the first and second power semiconductor modules each including a respective power semiconductor circuit;
b) connecting a first contact electrode and a second contact electrode with the respective power semiconductor circuit via soldering or ultrasound welding;
c) surrounding at least partially the first and second power semiconductor modules with a common housing, the first contact electrode and the second contact electrode of the first and second power semiconductor modules each being outwardly guided through the common housing through a recess in the common housing;
wherein the common housing includes a first contacting region, a second contacting region and a third contacting region;
wherein the first contact electrode and the second contact electrode of the first power semiconductor module are contactable together in the first contacting region;
wherein the first contact electrode and the second contact electrode of the second power semiconductor module are contactable together in the second contacting region;
and
wherein the second contact electrode of the first power semiconductor module and the second contact electrode of the second power semiconductor module are contactable together in the third contacting region.

5 more elements

Dependencies are inferred from the claim text.