Semiconductor device with active mold package and method therefor

A semiconductor device comprising:

• a semiconductor die including an active surface, a bottom surface opposite the active surface, sidewalls extending between the active surface and the bottom surface, and a die pad at the active surface of the semiconductor die;
• a first encapsulant formulated for selective laser activation, wherein the first encapsulant has overlies the active surface of the semiconductor die, and the first encapsulant has a major surface, sidewalls, and a first laser-activated patterned path at the major surface of the first encapsulant;
• a second encapsulant formulated for selective laser activation, wherein the second encapsulant contacts the sidewalls of the first encapsulant, and the second encapsulant has a major surface and a second laser-activated patterned path at the major surface of the second encapsulant;
• a conductive die connector extending through the first encapsulant, the conductive die connector having a first end and a second end, wherein the first end is directly connected to the die pad, and the second end is exposed at the major surface of the first encapsulant;
• and
• a first plated trace that includes
• a first conductive material portion formed on the first laser-activated patterned path of the first encapsulant, wherein the first conductive material portion of the first plated trace is coupled to the second end of the conductive die connector, and
• a second conductive material portion formed on the second laser-activated patterned path of the second encapsulant, wherein the second conductive material portion of the first plated trace is directly connected to the first conductive material portion of the first plated trace.