Electrically isolated discrete package with high performance ceramic substrate
AssigneeLittelfuse, Inc.
InventorsAalok Bhatt, Francois Perraud, Cynthia Selke, Rhodri Hughes, Tiburcio Maldo
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Abstract
A substrate package arrangement may include a substrate that contains a ceramic body, a top metal layer, disposed on a top side of the ceramic body, and a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top surface. The substrate package arrangement may further include a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer, wherein the substrate and lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.
Claims18
A substrate package arrangement, comprising:
- a substrate, the substrate comprising:
- a ceramic body;
- a top metal layer, disposed on a top side of the ceramic body;
- and
- a first intermediate layer disposed between the top side of the ceramic body and the top metal layer;
- a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top side;
- a second intermediate layer disposed between the bottom side of the ceramic body and the bottom metal layer;
- and
- a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer;
- a power semiconductor die disposed on the top metal layer,
- wherein the substrate and lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.
A semiconductor device package, comprising:
- a substrate, the substrate comprising:
- a ceramic body;
- a top metal layer, disposed on a top side of the ceramic body;
- a first intermediate layer disposed between the top side of the ceramic body and the top metal layer;
- a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top side;
- a second intermediate layer disposed between the bottom side of the ceramic body and the bottom metal layer;
- and
- a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer;
- a power semiconductor die disposed on the top metal layer;
- and
- a housing, extending around the substrate,
- wherein the substrate, the housing, the power semiconductor die, and the lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.
An isolated, discrete semiconductor device package, comprising:
- a substrate, the substrate comprising:
- a ceramic body;
- a top metal layer, disposed on a top side of the ceramic body;
- and
- a first intermediate layer disposed between the top side of the ceramic body and the top metal layer;
- a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top side;
- a second intermediate layer disposed between the bottom side of the ceramic body and the bottom metal layer;
- and
- a power SiC semiconductor die disposed on the top metal layer;
- a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer;
- and
- a housing, extending around the substrate,
- wherein the substrate, housing, the power SiC semiconductor die, and the lead structure are arranged in a discrete package, wherein the ceramic body is formed of a high thermal conductivity material.
Dependencies are inferred from the claim text.