Semiconductor material, light-emitting device, display panel and display device

A semiconductor material, comprises at least two selected from a group consisting of an oxide of a first element, an oxide of a second element, an oxide of a third element, an oxide of a fourth element and a compound of a fifth element, and comprises at least the oxide of the first element and the compound of the fifth element;

• the first element comprises at least one selected from a group consisting of In, Zn, Sn, Cd, Tl and Pb;
• the second element comprises at least one selected from a group consisting of Ta, Ga, W, Ba, V, Hf and Nb;
• the third element comprises at least one selected from a group consisting of Sn, Zr, Cr and Si;
• the fourth element comprises at least one selected from a group consisting of Zn, Al, Sn, Ta, Hf, Zr and Ti;
• and
• the compound of the fifth element comprises MxA, wherein M comprises at least one selected from a group consisting of Ce, Pr, Nd, Pm, Sm, Tb and Dy;
• A comprises at least one selected from a group consisting of O, N, S, Se, Te, Br, I, As and B;
• and x is greater than zero, wherein the mass ratio of the oxide of the first element, the oxide of the second element, the oxide of the third element, the oxide of the fourth element and the compound of the fifth element is (55% to 90%):(0% to 10%):(0% to 10%):(0% to 10%):(0.0001% to 15%).