Semiconductor structure and method for manufacturing the same which increases the channel length

A semiconductor structure, comprising:

• a substrate having an active region which comprises a first doped region, a channel region and a second doped region arranged along a first direction;
• and
• a gate comprising a first conductive portion and at least two second conductive portions contacted with and connected to the first conductive portion, the first conductive portion located above an upper surface of the substrate, the second conductive portions located below the upper surface of the substrate, adjacent second conductive portions arranged at intervals along the first direction, and the channel region surrounding sidewalls and a bottom surface of each of the second conductive portions;
• and
• an insulating structure located in the active region and located between the adjacent second conductive portions;
• and
• a projection of the first conductive portion on a surface of the substrate partially coincides with a projection of the first doped region on the surface of the substrate and partially coincides with a projection of the second doped region on the surface of the substrate, and a projection of each of the second conductive portions on the surface of the substrate is located between the projection of the first doped region on the surface of the substrate and the projection of the second doped region on the surface of the substrate.