US 12,598,769 B2 · Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and a manufacturing method thereof are disclosed in the present invention. The semiconductor device includes a source structure; a gate structure disposed above the source structure; a first opening penetrates through the gate structure in a vertical direction; a semiconductor structure; a gate dielectric layer; an insulation structure; and a void. The semiconductor structure is partially disposed in the first opening, and at least a portion of the gate structure is located at two opposite sides of the semiconductor structure in a horizontal direction. The gate dielectric layer is disposed in the first opening and located between the semiconductor structure and the gate structure. At least a portion of the insulation structure is disposed in the first opening, at least a portion of the semiconductor structure is located between the insulation structure and the gate dielectric layer, and the void is located in the insulation structure.

Claims20

Dependent claims

A semiconductor device, comprising:

a source structure;
a gate structure disposed above the source structure;
a first opening penetrating through the gate structure in a vertical direction;
a semiconductor structure partially disposed in the first opening, wherein at least a portion of the gate structure is located at two opposite sides of the semiconductor structure in a horizontal direction;
a gate dielectric layer disposed in the first opening and located between the semiconductor structure and the gate structure;
an insulation structure, wherein at least a portion of the insulation structure is disposed in the first opening, and at least a portion of the semiconductor structure is located between the insulation structure and the gate dielectric layer;
and
a void located in the insulation structure.

5 more elements

A manufacturing method of a semiconductor device, comprising:

forming a gate structure above a source structure;
forming a first opening penetrating through the gate structure in a vertical direction;
forming a gate dielectric layer in the first opening;
forming an insulation structure, wherein at least a portion of the insulation structure is formed in the first opening;
and
forming a semiconductor structure partially in the first opening, wherein a void is located in the insulation structure, at least a portion of the gate structure is located at two opposite sides of the semiconductor structure in a horizontal direction, the gate dielectric layer is located between the semiconductor structure and the gate structure, and at least a portion of the semiconductor structure is located between the insulation structure and the gate dielectric layer.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims20