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US 12,598,755 B2Granted
Memory storage device and method of manufacturing the same
AssigneeZhuhai Chuangfeixin Technology Co., Ltd.
InventorsLi Li, Zhigang Wang
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Abstract
A storage device for storing electron charges includes a substrate, a tunnel oxide layer formed on the substrate, a silicon-rich nitride layer comprising silicon nitride on the tunnel oxide layer, and a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises oxynitride silicide. The electron traps in the modulated interface layer have deeper trap depths than in the silicon-rich nitride layer.
Claims15
A storage device for storing electron charges, comprising:
- a substrate;
- a tunnel oxide layer formed on the substrate;
- a silicon-rich nitride layer on the tunnel oxide layer, wherein the silicon-rich nitride layer comprises silicon nitride;
- and
- a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises oxynitride silicide,
- wherein electron traps in the modulated interface layer have deeper trap depths than in the silicon-rich nitride layer.
3 more elements
Dependencies are inferred from the claim text.