Semiconductor structure and manufacturing method thereof
AssigneesChangxin Memory Technologies, Inc., Changxin Jidian (Beijing) Memory Technologies Co., Ltd.
InventorZhaohong Lv
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Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes: a substrate, a first dielectric layer, a second dielectric layer, and a gate structure, where an active region is provided in the substrate, and a source region of a first doping type and a drain region of the first doping type are disposed in the active region; the first dielectric layer is disposed on the substrate and covers a part of the source region and/or a part of the drain region; the second dielectric layer is disposed on the substrate and connected to the first dielectric layer, a dielectric constant of the second dielectric layer is greater than a dielectric constant of the first dielectric layer.
Claims8
A semiconductor structure, comprising:
- a substrate, wherein an active region is provided in the substrate, and a source region of a first doping type and a drain region of the first doping type are disposed in the active region;
- a first dielectric layer, disposed on the substrate and covering at least one of a part of the source region or a part of the drain region;
- a second dielectric layer, disposed on the substrate, wherein the first dielectric layer is connected to the second dielectric layer, and a dielectric constant of the second dielectric layer is greater than a dielectric constant of the first dielectric layer;
- and
- a gate structure, wherein orthographic projection of the gate structure on the substrate covers orthographic projections of the second dielectric layer and the first dielectric layer on the substrate;
- the gate structure comprises a gate layer, the gate layer is disposed on the second dielectric layer, and an overlapping region exists between projection of the gate layer on the substrate and the projection of the first dielectric layer on the substrate;
- the first dielectric layer comprises a first dielectric sublayer and an air gap, at least part of the air gap is located below the gate layer, and the air gap is located between the first dielectric sublayer and the second dielectric layer.
Dependencies are inferred from the claim text.