Memory device, and memory system and operation method thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsFeiyang Zhang, Hongwen Liu
Life of this patent
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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsFeiyang Zhang, Hongwen Liu
Estimating the term…
Examples of the present disclosure provide a memory device, a memory system and an operation method of the memory system, and a storage medium. The memory device includes: multiple word lines, where a plurality of strings coupled to each of the word lines are divided into a first string area and a second string area; and at least one redundant stripe corresponding to each of the word lines, where the redundant stripe comprises a first redundant stripe which is configured to store first check data. The first check data is obtainable by performing error correction coding on data in a first string area of a word line where the first redundant stripe is located and data in a second string area of a word line adjacent to the word line where the first redundant stripe is located.
A memory device, comprising:
A memory system, comprising:
An operation method of a memory system, comprising:
Dependencies are inferred from the claim text.