Method of forming structure including a doped adhesion film

A method of forming a structure, the method comprising the steps of:

• providing a substrate comprising a plurality of gaps within a first reaction chamber,
• forming a doped nitride adhesion film on a surface of the substrate and within the plurality of gaps, wherein the doped nitride adhesion film comprises a first material and a second material, wherein forming the doped nitride adhesion film comprises depositing a layer of the first material by a cyclical deposition process and depositing a layer of the second material by a cyclical deposition process, wherein the first material is overlying the second material, wherein the first material is represented by MnXm where M comprises at least one of molybdenum and ruthenium, X is a dopant comprising one or more of tungsten, boron, and tantalum, n ranges from 1 to 5, and m ranges from 1 to 10, and wherein the second material comprises titanium nitride;
• and
• depositing a metal overlying the doped nitride adhesion film, wherein the metal comprises at least one of molybdenum and ruthenium.