Semiconductor device including bonding enhancement layer and method of forming the same

A semiconductor device, comprising:

• a first substrate;
• a first structure on the first substrate, the first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement material;
• a second substrate on the first structure;
• a second structure between the first structure and the second substrate, the second structure including a second dielectric layer and a second conductive pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer thereunder, the second conductive pattern directly contacting the first conductive pattern thereunder, and the second conductive pattern including a second conductive material and a second bonding enhancement material;
• a first bonding enhancement layer between the first conductive pattern and the second dielectric layer;
• and
• a second bonding enhancement layer between the second conductive pattern and the first dielectric layer,
• wherein:
• a bottom surface of at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a lower level than an interface between the first dielectric layer and the second dielectric layer,
• a top surface of the at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a higher level than the interface between the first dielectric layer and the second dielectric layer,
• the first bonding enhancement layer includes the first bonding enhancement material or a material included in the second dielectric layer,
• the second bonding enhancement layer includes the second bonding enhancement material or a material included in the first dielectric layer,
• the first bonding enhancement material includes a material having a higher bonding force to the material included in the second dielectric layer than a bonding force of the first conductive material to the material included in the second dielectric layer, and
• the second bonding enhancement material includes a material having a higher bonding force to the material included in the first dielectric layer than a bonding force of the second conductive material to the material included in the first dielectric layer.

A semiconductor device, comprising:

• a first substrate;
• a first structure on the first substrate, the first structure including a first dielectric layer and a first shielding pattern in the first dielectric layer, the first shielding pattern including a first conductive material and a first bonding enhancement material;
• a second substrate on the first structure;
• a plurality of photodiodes in the second substrate;
• a second structure between the first structure and the second substrate, the second structure including a second dielectric layer and a second shielding pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer thereunder, the second shielding pattern directly contacting the first shielding pattern thereunder, and the second shielding pattern including a second conductive material and a second bonding enhancement material;
• a first bonding enhancement layer between the first shielding pattern and the second dielectric layer;
• and
• a second bonding enhancement layer between the second shielding pattern and the first dielectric layer,
• wherein:
• a bottom surface of at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a lower level than an interface between the first dielectric layer and the second dielectric layer,
• a top surface of the at least one of the first bonding enhancement layer or the second bonding enhancement layer is at a higher level than the interface between the first dielectric layer and the second dielectric layer,
• the first bonding enhancement layer includes the first bonding enhancement material or a material included in the second dielectric layer,
• the second bonding enhancement layer includes the second bonding enhancement material or a material included in the first dielectric layer,
• the first bonding enhancement material includes a material having a higher bonding force to the material included in the second dielectric layer than a bonding force of the first conductive material to the material included in the second dielectric layer, and
• the second bonding enhancement material includes a material having a higher bonding force to the material included in the first dielectric layer than a bonding force of the second conductive material to the material included in the first dielectric layer.