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US 12,593,673 B2Granted
Semiconductor structure and method making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yen Huang, Kai-Fang Cheng, Chi-Lin Teng, Hai-Ching Chen, Tien-I Bao
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Abstract
The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.
Claims20
A structure, comprising:
- a first conductive feature, wherein the first conductive feature includes a first metal contact, a first metal via, or a first metal line of an interconnect structure;
- a first dielectric layer located over the first conductive feature, wherein the first dielectric layer contains aluminum, oxygen, and nitrogen, wherein a weight of the aluminum in the first dielectric layer is less than a weight of the nitrogen in the first dielectric layer, and wherein the weight of the nitrogen is less than a weight of the oxygen in the first dielectric layer;
- a second dielectric layer located over the first dielectric layer, wherein the second dielectric layer and the first dielectric layer have different material compositions;
- and
- a second conductive feature that extends vertically at least in part through the second dielectric layer, wherein the second conductive feature is partially aligned with the first conductive feature, and wherein the second conductive feature includes a second metal contact, a second metal via, or a second metal line of the interconnect structure.
2 more elements
A structure, comprising:
- a first conductive feature disposed over a substrate;
- a first dielectric layer located over the first conductive feature, wherein the first dielectric layer is porous and has a single material composition, wherein the single material composition contains aluminum, nitrogen, or oxygen;
- a second dielectric layer located over the first dielectric layer, wherein the second dielectric layer and the first dielectric layer have different material compositions;
- a second conductive feature embedded at least partially in the second dielectric layer;
- and
- a third dielectric layer located over the second conductive feature and over the second dielectric layer, wherein the third dielectric layer is porous and contains aluminum, nitrogen, or oxygen.
3 more elements
A structure, comprising:
- a first conductive feature, wherein the first conductive feature includes a first metal contact, a first metal via, or a first metal line of an interconnect structure;
- a first cap layer located over, and aligned with, the first conductive feature, wherein the first cap layer contains cobalt (Co), manganese (Mn), nickel (Ni), ruthenium (Ru), or titanium (Ti);
- a first dielectric layer located over an entire upper surface of the first cap layer in a cross-sectional side view, wherein the first dielectric layer contains aluminum;
- a second dielectric layer located over the first dielectric layer, wherein the second dielectric layer and the first dielectric layer have different material compositions, and wherein a bottom surface of the second dielectric layer extends to a top surface of the first dielectric layer;
- a second conductive feature embedded in the second dielectric layer, wherein the second conductive feature includes a second metal contact, a second metal via, or a second metal line of the interconnect structure;
- a second cap layer located over, and aligned with, the second conductive feature, wherein the second cap layer and the first cap layer have a same material composition;
- and
- a third dielectric layer located over the second cap layer and over the second dielectric layer, wherein the third dielectric layer and the first dielectric layer have substantially similar material compositions.
5 more elements
Dependencies are inferred from the claim text.