Method of manufacturing semiconductor structure
AssigneeNanya Technology Corporation
InventorLi Han Lin
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor structure includes the following steps. A bit line structure is formed over a substrate. A first spacer layer is formed on a first sidewall of the bit line structure. A second spacer layer is formed on a second sidewall of the first spacer layer. A third spacer layer is formed on a third sidewall of the second spacer layer. An oxidation process is performed on the second spacer layer, thereby forming an oxidized portion and a remaining portion in the second spacer layer, in which the oxidized portion is between the remaining portion and the third spacer layer. A fourth spacer layer is formed on a fourth sidewall of the third spacer layer.
Claims17
A method of manufacturing a semiconductor structure, comprising:
- forming a bit line structure over a substrate;
- forming a first spacer layer on a first sidewall of the bit line structure;
- forming a second spacer layer on a second sidewall of the first spacer layer;
- forming a third spacer layer on a third sidewall of the second spacer layer;
- performing an oxidation process on the second spacer layer, thereby forming an oxidized portion and a remaining portion in the second spacer layer, wherein the oxidized portion is between the remaining portion and the third spacer layer;
- and
- forming a fourth spacer layer on a fourth sidewall of the third spacer layer.
A method of manufacturing a semiconductor structure, comprising:
- forming a bit line structure over a substrate;
- forming a first spacer layer on a first sidewall of the bit line structure, wherein the first spacer layer comprises an insulating nitride;
- forming a second spacer layer on a second sidewall of the first spacer layer, wherein the second spacer layer comprises SiCO and has a first portion and a second portion, and the first portion is between the first spacer layer and the second portion;
- forming a third spacer layer to cover the second portion of the second spacer layer;
- performing an oxidation process to oxidize the second portion of the second spacer layer;
- forming a fourth spacer layer on a third sidewall of the third spacer layer;
- and
- forming a buried contact adjacent to the fourth spacer layer.
Dependencies are inferred from the claim text.