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US 12,593,664 B2Granted
Method of manufacturing structure and method of manufacturing capacitor
AssigneeKabushiki Kaisha Toshiba
InventorsMitsuo Sano, Susumu Obata, Kazuhito Higuchi, Takayuki Tajima
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Abstract
In general, according to one embodiment, there is provided a method of manufacturing a structure. The method includes forming a recess in a semiconductor substrate; oxidizing at least a bottom inner surface of the recess; and providing at least the bottom inner surface of the recess with a liquid capable of dissolving an oxide of a semiconductor substrate material.
Claims7
A method of manufacturing a structure, comprising:
- forming a recess in a Si substrate as a semiconductor substrate;
- oxidizing at least a needle-shaped semiconductor substrate material on a bottom inner surface of the recess to form a needle-shaped Si oxide on the bottom inner surface of the recess;
- and
- providing at least the needle-shaped Si oxide on the bottom inner surface of the recess with a liquid that is capable of dissolving a Si oxide, thereby dissolving the needle-shaped Si oxide.
1 more element
Dependencies are inferred from the claim text.