MRAM device with wrap-around top electrode contact

A semiconductor device comprising:

• a magnetic tunnel junction (MTJ) stack;
• a dielectric encapsulation layer surrounding vertical side surfaces of the MTJ stack;
• and
• a metallic encapsulation layer surrounding the dielectric encapsulation layer, wherein the metallic encapsulation layer is electrically and physically connected to a top electrode of the MTJ stack, and wherein
• a lower horizontal surface of the metallic encapsulation layer is below a bottom electrode contact of the MTJ stack.

A method comprising:

• forming a magnetic tunnel junction (MTJ) stack;
• and
• forming a dielectric encapsulation layer surrounding vertical side surfaces of the MTJ stack,
• forming a metallic encapsulation layer surrounding the dielectric encapsulation layer, wherein the metallic encapsulation layer is electrically and physically connected to a top electrode of the MTJ stack.