Method of fabricating memory device including magnetic tunnel junctions with insulating sidewalls

A method of manufacturing a memory device, the method comprising:

• sequentially forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on each other;
• forming a magnetic tunnel junction structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer, the forming the magnetic tunnel junction structure including forming a redeposited metal covering a sidewall of the magnetic tunnel junction structure;
• forming a sidewall metal layer by etching a portion of a redeposited metal;
• performing an oxidizing operation that includes oxidizing an exposed surface of the sidewall metal layer by irradiating an ion beam of oxygen ions toward the exposed surface of the sidewall metal layer to provide an oxidized portion of the sidewall metal layer;
• and
• etching the oxidized portion of the sidewall metal layer by irradiating an ion beam of inert gas ions toward the oxidized portion of the sidewall metal layer, and
• the performing the oxidizing operation and the performing etching operation being performed in one chamber at a same time to form a sidewall insulating layer covering the sidewall of the magnetic tunnel junction structure.

A method of manufacturing a memory device, the method comprising:

• sequentially forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on each other;
• forming a magnetic tunnel junction structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer, the forming the magnetic tunnel junction structure including forming a redeposited metal covering a sidewall of the magnetic tunnel junction structure;
• forming a sidewall metal layer by etching a portion of the redeposited metal;
• and
• forming a sidewall insulating layer covering the sidewall of the magnetic tunnel junction structure by oxidizing the sidewall metal layer,
• the forming the sidewall insulating layer including alternately performing a process of oxidizing of an exposed surface of the sidewall metal layer to provide an oxidized sidewall of the metal layer and a process of irradiating the oxidized sidewall of the metal layer with a first ion beam of inert gas ions, and
• the forming the sidewall insulating layer, after the alternately performing the process of oxidizing and the process of irradiating is performed two or more times, further including an operation of irradiating the exposed surface of the sidewall metal layer with a second ion beam including reactive ions and inert gas ions.