Light-emitting element

A light-emitting element comprising:

• a semiconductor structure body including
• an n-side layer,
• a p-side layer, and
• an active layer positioned between the n-side layer and the p-side layer,
• the n-side layer including a plurality of first regions exposed from the active layer and the p-side layer in a plan view;
• a first p-side electrode located outside the semiconductor structure body in the plan view;
• a first n-side electrode located outside the semiconductor structure body in the plan view;
• a second p-side electrode located on a side of a surface of the p-side layer opposite to a surface of the p-side layer on which the active layer is located;
• a p-side wiring layer including
• a first p-side connection portion connected with the first p-side electrode, and
• at least one second p-side connection portion connected with the second p-side electrode;
• and
• an n-side wiring layer including a plurality of first n-side connection portions connected to the plurality of first regions of the n-side layer, wherein
• the p-side wiring layer includes a plurality of first openings that overlap the plurality of first regions in the plan view,
• the plurality of first openings having mutually-different areas are arranged on a first axis connecting the first p-side electrode and the first n-side electrode with a shortest distance in the plan view,
• an area of one of the plurality of first openings positioned at a first distance from the first p-side electrode is greater than an area of one of the plurality of first openings positioned at a second distance from the first p-side electrode in the plan view,
• the second distance is greater than the first distance,
• each of the first distance and the second distance is a shortest distance between the first p-side electrode and a respective one of the first openings,
• the first distance is the shortest among shortest distances between the first p-side electrode and the plurality of first openings, respectively.

A light-emitting element comprising:

• a semiconductor structure body including
• an n-side layer,
• a p-side layer, and
• an active layer positioned between the n-side layer and the p-side layer,
• the n-side layer including a plurality of first regions exposed from the active layer and the p-side layer in a plan view;
• a first p-side electrode located outside the semiconductor structure body in the plan view;
• a second p-side electrode located on a side of a surface of the p-side layer opposite to a surface on which the active layer is located;
• a p-side wiring layer including
• a first p-side connection portion connected with the first p-side electrode, and
• at least one second p-side connection portion connected with the second p-side electrode;
• and
• an n-side wiring layer including a plurality of first n-side connection portions connected to the plurality of first regions of the n-side layer, wherein
• in the plan view, a shortest distance between the first p-side electrode and the at least one second p-side connection portion is greater than a shortest distance between the first p-side electrode and a closest one of the plurality of first n-side connection portions that is most proximate to the first p-side electrode among the plurality of first n-side connection portions,
• in the plan view, the second p-side electrode is located at least in a region between the first p-side electrode and the closest one of the plurality of first n-side connection portions,
• the at least one second p-side connection portion is one of a plurality of second p-side connection portions, and
• the plurality of second p-side connection portions are spaced apart from each other in the plan view,
• the plurality of second p-side connection portions include
• at least one second p-side connection portion to which a shortest distance from the first p-side electrode is a third distance, and
• at least one second p-side connection portion to which a shortest distance from the first p-side electrode is a fourth distance greater than the third distance,
• the third distance is the shortest among shortest distances between the first p-side electrode and respective ones of the second p-side connection portions, and
• in the plan view, an area of the at least one second p-side connection portion to which the shortest distance from the first p-side electrode is the third distance is less than an area of the at least one second p-side connection portion to which the shortest distance from the first p-side electrode is the fourth distance.