Compound semiconductor devices combined in a face-to-face arrangement
AssigneeAnalog Devices, Inc.
InventorsJames G. Fiorenza, Daniel Piedra
Life of this patent
Estimating the term…
Abstract
In one or more implementations, a semiconductor device can include a first compound semiconductor device coupled to a second compound semiconductor device coupled in a face-to-face arrangement. The first compound semiconductor device can be coupled to the second compound semiconductor device such that a cavity is formed that includes a first gate electrical contact of the first compound semiconductor device and a second gate electrical contact of the second compound semiconductor device. A gap can be present between the first gate electrical contact and the second gate electrical contact.
Claims20
A semiconductor device comprising:
- a first compound semiconductor device including:
- a first semiconductor layer that includes a first barrier layer and a first channel layer, the first channel layer being comprised of a compound material having a Group 13 element and a Group 15 element;
- and
- a first drain electrical contact, a first source electrical contact, and a first gate electrical contact disposed on the first channel layer;
- and
- a second compound semiconductor device including:
- a second semiconductor layer that includes a second barrier layer and a second channel layer, the second channel layer being comprised of the compound material having the Group 13 element and the Group 15 element;
- and
- a second drain electrical contact, a second source electrical contact, and a second gate electrical contact disposed on the second channel layer;
- and
- wherein the first compound semiconductor device and the second compound semiconductor device are coupled in a face-to-face arrangement such that a gap is present between the first gate electrical contact and the second gate electrical contact.
A process to produce a compound semiconductor device, the process comprising:
- producing a first compound semiconductor device, the first compound semiconductor device including:
- a first semiconductor layer that includes a first barrier layer and a first channel layer, the first channel layer being comprised of a compound material having a Group 13 element and a Group 15 element;
- and
- a first drain electrical contact, a first source electrical contact, and a first gate electrical contact disposed on the first channel layer;
- producing a second compound semiconductor device, the second compound semiconductor device including:
- a second semiconductor layer that includes a second barrier layer and a second channel layer, the second channel layer being comprised of the compound material having the Group 13 element and the Group 15 element;
- and
- a second drain electrical contact, a second source electrical contact, and a second gate electrical contact disposed on the second channel layer;
- and
- coupling the first compound semiconductor device to the second compound semiconductor device in a face-to-face arrangement to produce the compound semiconductor device such that a gap is present between the first gate electrical contact and the second gate electrical contact.
Dependencies are inferred from the claim text.