Vertical nonvolatile memory device including gate electrodes with metal-doped graphene

A nonvolatile memory device comprising:

• a channel layer extending in a first direction;
• a plurality of gate electrodes and a plurality of spacers each extending in a second direction crossing the first direction, the plurality of gate electrodes and the plurality of spacers being alternately arranged with each other in the first direction;
• and
• a gate insulating layer extending in the first direction between the channel layer and the plurality of gate electrodes,
• wherein each of the plurality of gate electrodes includes a metal-doped graphene,
• the metal-doped graphene includes a metal particle, and
• the metal particle includes at least one of Ru, Ti, Pt, Ta, Rh, Ir, and Co.