Cascode semiconductor device

A semiconductor power device comprising:

• a first power transistor configured to generate an output voltage;
• a second power transistor configured to receive an input voltage, the second power transistor connected to the first power transistor in a cascode configuration;
• and
• a voltage divider circuit configured to indirectly couple a gate terminal of the first power transistor to a source terminal of the second power transistor, the voltage divider circuit configured to limit a gate-source voltage of the first power transistor to be less than a gate-source threshold level of the first power transistor, regardless of a magnitude of a drain-source voltage of the second power transistor.

A method comprising:

• activating a first power transistor of a semiconductor power device and a second power transistor of the semiconductor power device in response to a gate-source voltage of the semiconductor power device being equal to or greater than a threshold voltage of the second power transistor;
• deactivating the second power transistor in response to the gate-source voltage of the semiconductor power device being less than the threshold voltage of the second power transistor;
• and
• limiting, by a voltage divider circuit, of a gate-source voltage of the first power transistor to be less than a gate-source threshold level of the first power transistor, regardless of a magnitude of a drain-source voltage of the second power transistor, the voltage divider circuit indirectly connecting a gate terminal of the first power transistor to a source terminal of the second power transistor.