Wafer inspection apparatus using three-dimensional image and method of inspecting wafer using the same

A wafer inspection apparatus comprising:

• a stage configured such that a wafer is arranged on the stage, the stage configured to move for scanning;
• an optical apparatus configured to align the wafer on the stage and generate an optical intensity image including an optical intensity profile;
• a focus adjusting unit configured to move the stage to align light incident onto the wafer to be in focus on a surface of the wafer;
• an image processor configured to integrate the optical intensity image with a depth of the surface of the wafer to generate and analyze a three-dimensional (3D) image;
• and
• a controller configured to control the stage, the optical apparatus, the focus adjusting unit or the image processor,
• wherein the optical apparatus includes an optical system configured to render light incident onto the wafer and a sensor configured to receive light reflected from the wafer,
• wherein the stage is configured to move to align the light rendered by the optical apparatus to be in focus on the surface of the wafer, and
• the generated 3D image includes the depth of the surface of the wafer,
• wherein the image processor is configured to determine the depth of the surface of the wafer based on movement of the stage,
• wherein the image processor is configured to determine a characteristic of a defect to be inspected based on the determined depth of the surface of the wafer,
• wherein the image processor is configured to, based on the determined depth of the surface of the wafer, divide the wafer into a plurality of care areas and select wafer inspection parameters for each of the care areas, at least two care areas of the plurality of care areas having different wafer inspection parameters,
• wherein the wafer inspection parameters include at least one of a wavelength of light, a polarization state, an amount of light, a vertical level of focus, an angle of incidence, and an angle of reflection, and
• wherein the optical apparatus is configured to adjust the wafer inspection parameters for each respective care area of the plurality of care areas based on a determined characteristic of the defect to be inspected.

A method of inspecting a wafer, the method comprising:

• arranging the wafer on a stage;
• aligning the wafer on the stage using an optical apparatus configured to generate an optical intensity image including an optical intensity profile;
• after incidence of light onto the wafer, adjusting a relative position between the wafer and the optical apparatus or a focal length of light emitted by the optical apparatus to align the light incident onto the wafer from the optical apparatus to be in focus on a surface of the wafer, to determine a depth of the surface of the wafer;
• generating a three-dimensional (3D) image of a top surface of the wafer;
• and
• analyzing the 3D image,
• wherein the 3D image is generated by integrating the optical intensity image and the determined depth of the surface of the wafer, and
• wherein the generated 3D image includes the depth of the surface of the wafer,
• wherein the generating of the 3D image includes determining the depth of the surface of the wafer based on the adjustment of the relative position or the focal length,
• wherein the method further comprises determining a characteristic of a defect to be inspected based on the determined depth of the surface of the wafer,
• wherein the method further comprises dividing, based on the determined depth of the surface of the wafer, the wafer into a plurality of care areas and selecting wafer inspection parameters for each of the plurality of care areas, at least two care areas of the plurality of care areas having different wafer inspection parameters,
• wherein the wafer inspection parameters include at least one of a wavelength of light, a polarization state, an amount of light, a vertical level of focus, an angle of incidence, and an angle of reflection, and
• wherein the analyzing of the 3D image includes adjusting at least one from among the wafer inspection parameters for each respective care area of the plurality of care areas based on the determined characteristic of the defect to be inspected.