Substrates including micro-structured thin film capacitors
AssigneeIntel Corporation
InventorsChun-Hao Lin, Teng Sun, Yuxin Fang
Life of this patent
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Abstract
Disclosed herein are microelectronic assemblies including strengthened glass cores, as well as related devices and methods. In some embodiments, a microelectronic substrate with an in situ capacitor, the capacitor may include a first conductive layer having first microstructures at a first surface, a second conductive layer on the first conductive layer and having second microstructures at a second surface, where the second microstructures vertically interlock with the first microstructures, and a high-k dielectric material between the first microstructures and the second microstructures.
Claims16
A microelectronic substrate, comprising:
- a first conductive layer having first microstructures at a first surface;
- a second conductive layer on the first conductive layer, the second conductive layer having second microstructures at a second surface, wherein the second microstructures vertically interlock with the first microstructures;
- and
- a high-k dielectric material between the first microstructures and the second microstructures, wherein:
- the first microstructures and the second microstructures include pillars or walls;
- and
- the first microstructures include pillars, and one (1) square millimeter (mm2) surface area of the first conductive layer includes between 2,500 pillars and 10,000 pillars.
A microelectronic substrate, comprising:
- a first conductive layer having first microstructures at a first surface;
- a second conductive layer on the first conductive layer, the second conductive layer having second microstructures at a second surface, wherein the second microstructures vertically interlock with the first microstructures;
- and
- a high-k dielectric material between the first microstructures and the second microstructures, wherein:
- the first microstructures and the second microstructures include pillars or walls;
- and
- the first microstructures include pillars, a thickness of the first microstructures is between 5 microns and 15 microns, and a spacing between the first microstructures is between 5 microns and 10 microns.
A microelectronic assembly, comprising:
- a substrate having a first surface and an opposing second surface;
- a capacitor in the substrate adjacent to the second surface, the capacitor including:
- a first conductive layer having first microstructures at a surface;
- a second conductive layer on the first conductive layer, the second conductive layer having second microstructures at a surface, wherein the second microstructures vertically interlock with the first microstructures;
- and
- a high-k dielectric material between the first microstructures and the second microstructures;
- and
- a die at the second surface of the substrate and electrically coupled to the capacitor, wherein:
- the first microstructures include pillars, and one (1) square millimeter (mm2) surface area of the first conductive layer includes between 2,500 pillars and 10,000 pillars.
A microelectronic assembly, comprising:
- a substrate having a first surface and an opposing second surface;
- a plurality of capacitors in the substrate adjacent to the second surface, the plurality of capacitors including:
- a first conductive layer having first microstructures at a surface;
- a second conductive layer on the first conductive layer, the second conductive layer having second microstructures at a surface, wherein the second microstructures vertically interlock with the first microstructures;
- and
- a high-k dielectric material between the first microstructures and the second microstructures, wherein:
- the first microstructures and the second microstructures include pillars or walls;
- and
- the first microstructures include pillars, and one (1) square millimeter (mm2) surface area of the first conductive layer includes between 2,500 pillars and 10,000 pillars;
- and
- a first die at the second surface of the substrate and electrically coupled to one of the plurality of capacitors;
- and
- a second die at the second surface of the substrate and electrically coupled to another one of the plurality of capacitors.
Dependencies are inferred from the claim text.