Metal-insulator-metal (MIM) capacitors with curved electrode
AssigneeMicrochip Technology Incorporated
InventorYaojian Leng
Life of this patent
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Abstract
A method for making a metal-insulator-metal (MIM) capacitors by etching a dielectric layer to form a via or contact hole, a tub, and a trench in the dielectric layer; depositing conformal metal in the via or contact hole, the tub, and the trench, wherein deposited conformal metal forms a via or contact in the via or contact hole; depositing a bottom electrode metal in the tub to form a bottom electrode of a metal-to-metal (MIM) capacitor; removing bottom electrode metal from the bottom electrode to form a dish-shape upper surface; depositing an insulator material on the bottom electrode to form an insulator layer of the MIM capacitor; and depositing a top electrode metal on the insulator layer to form a top electrode of the MIM capacitor.
Claims21
A method comprising:
- etching a dielectric layer to form a via or contact hole, a tub, and a trench in the dielectric layer, wherein the trench is adjacent to the tub;
- depositing conformal metal in the via or contact hole, the tub, and the trench, wherein deposited conformal metal forms a via or contact in the via or contact hole, respectively;
- depositing a bottom electrode metal in the tub to form a bottom electrode of a metal-insulator-metal (MIM) capacitor;
- removing a portion of the bottom electrode metal from the bottom electrode to form a dish-shape upper surface, comprising removing bottom electrode metal to a depth sufficient to build a MIM capacitor whose bottom electrode is below an upper surface of the dielectric laver;
- depositing an insulator material on the bottom electrode to form an insulator layer of the MIM capacitor;
- and
- depositing a top electrode metal on the insulator layer to form a top electrode of the MIM capacitor.
A semiconductor device made by a process, the process comprising:
- etching a dielectric layer to form a via or contact hole, a tub, and a trench in the dielectric layer, wherein the trench is adjacent to the tub;
- depositing conformal metal in the via or contact hole, the tub, and the trench, wherein deposited conformal metal forms a via or contact in the via or contact hole, respectively;
- depositing a bottom electrode metal in the tub to form a bottom electrode of a metal-insulator-metal (MIM) capacitor;
- removing a portion of the bottom electrode metal from the bottom electrode to form a dish-shape upper surface, comprising removing bottom electrode metal to a depth sufficient to build a MIM capacitor whose bottom electrode is below an upper surface of the dielectric laver;
- depositing an insulator material on the bottom electrode to form an insulator layer of the MIM capacitor;
- and
- depositing a top electrode metal on the insulator layer to form a top electrode of the MIM capacitor.
A method comprising:
- etching a dielectric layer to form a via or contact hole, a tub, and a trench in the dielectric layer, wherein the trench is adjacent to the tub;
- depositing conformal metal in the via or contact hole, the tub, and the trench, wherein deposited conformal metal forms a via or contact in the via or contact hole, respectively;
- depositing a bottom electrode metal in the tub to form a bottom electrode of a metal-insulator-metal (MIM) capacitor;
- removing a portion, of the bottom electrode metal from the bottom electrode, large enough to substantially reduce the breakdown voltage of the MIM capacitor, comprising removing bottom electrode metal to a depth sufficient to build a MIM capacitor whose bottom electrode is below an upper surface of the dielectric laver;
- depositing an insulator material on the bottom electrode to form an insulator layer of the MIM capacitor;
- and
- depositing a top electrode metal on the insulator layer to form a top electrode of the MIM capacitor.
Dependencies are inferred from the claim text.