Non-volatile memory device having schottky diode

A non-volatile memory circuit, comprising:

• a non-volatile memory device array including a plurality of non-volatile memory devices;
• and
• a control circuit configured to operably control the non-volatile memory device array so as to read from or write into the non-volatile memory devices;
• wherein the non-volatile memory device includes:
• an insulation layer, which is electrically insulative;
• a first Schottky diode, which is formed on the insulation layer, wherein a cathode of the first Schottky is formed in a monocrystalline semiconductor layer;
• a first writing wire which is conductive, wherein the first writing wire is electrically connected to a first end of the first Schottky diode;
• a memory unit, which is located on the first Schottky diode, wherein the memory unit is electrically connected to a second end of the first Schottky diode;
• and
• a selection wire which is conductive, wherein the selection wire is located on the memory unit and is electrically connected to the memory unit;
• wherein in a case where the non-volatile memory device is selected for a first data to be written into, a first current flows through the first Schottky diode, so as to write the first data into the memory unit;
• wherein the cathode of the first Schottky diode is the first end of the first Schottky diode or the second end of the first Schottky diode.

A non-volatile memory device, comprising:

• an insulation layer, which is electrically insulative;
• a first bit line and a second bit line, which are conductive and are formed on and connected to top of the insulation layer, wherein the first bit line and the second bit line are formed in a first metal layer;
• a first connection conduction unit and a second connection conduction unit, which are conductive and are formed on and connected to top of the insulation layer, wherein the first connection conduction unit and the second connection conduction unit are formed in the first metal layer same with the first bit line and the second bit line;
• a first Schottky diode and a second Schottky diode, which are formed on and connected to the first bit line and the second bit line respectively, wherein the first Schottky diode and the second Schottky diode are stacked on and electrically connected to the first bit line and the second bit line respectively;
• a third Schottky diode and a fourth Schottky diode, which are formed on and connected to the first connection conduction unit and the second connection conduction unit respectively, wherein the third Schottky diode and the fourth Schottky diode are stacked on and electrically connected to the first connection conduction unit and the second connection conduction unit respectively;
• a third connection conduction unit and a fourth connection conduction unit, which are conductive and are stacked on and electrically connected to the first connection conduction unit and the second connection conduction unit respectively;
• a fifth connection conduction unit, which is conductive and is stacked on and electrically connected to the third connection conduction unit, the fourth connection conduction unit, the first Schottky diode, and the second Schottky diode, wherein the fifth connection conduction unit is formed in a second metal layer;
• a first word line and a second word line, which are conductive and are stacked on and electrically connected to the third Schottky diode and the fourth Schottky diode respectively, wherein the first word line and the second word line are formed in the second metal layer same with the fifth connection conduction unit;
• a memory unit, which is stacked on and is electrically connected to the fifth connection conduction unit;
• and
• a read selection wire, which is stacked on and is electrically connected to the memory unit;
• wherein in a case where the non-volatile memory device is selected for a first data to be written into, a first current flows through the first bit line, the first Schottky diode, the fifth connection conduction unit, the third connection conduction unit, the first connection conduction unit, the third Schottky diode, and the first word line in sequence, so as to write the first data into the memory unit;
• wherein in a case where the non-volatile memory device is selected to for a second data to be written into, a second current flows through the second bit line, the second Schottky diode, the fifth connection conduction unit, the fourth connection conduction unit, the second connection conduction unit, the fourth Schottky diode, and the second word line in sequence, so as to write the second data into the memory unit.