Semiconductor memory structure with butted contact and method for manufacturing same
AssigneeChangxin Memory Technologies, Inc.
InventorMin Li
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate, and a first gate structure and a first contact structure on the substrate, the first contact structure includes a first contact part and a second contact part, the first contact part is connected to the second contact part, the first contact part is located between the second contact part and the substrate, the first contact structure is electrically connected to the first gate structure and the substrate, and sectional area of the first contact part is greater than sectional area of the second contact part.
Claims20
A semiconductor structure, wherein the semiconductor structure comprises a substrate, and a first gate structure and a first contact structure on the substrate, the first contact structure comprises a first contact part and a second contact part, the first contact part is connected to the second contact part, and the first contact part is located between the second contact part and the substrate,
- the first contact structure is electrically connected to the first gate structure and the substrate, and sectional area of the first contact part is greater than sectional area of the second contact part;
- and
- wherein the first gate structure comprises a gate conductive layer, a conductive structure at an end of the first gate structure away from the substrate, the conductive structure is in contact with the gate conductive layer and electrically connected to the second contact part, and the conductive structure and the second contact part are located in a same plane.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, on which a first gate structure is provided;
- disposing a second gate structure on the substrate, wherein the second gate structure and the first gate structure are spaced apart from each other;
- forming a first contact part on the substrate;
- and
- forming a second contact part on a top of the first contact part, wherein the second contact part and the first contact part are connected and together form a first contact structure, the first contact structure is electrically connected to the first gate structure and the substrate, and sectional area of the first contact part is greater than sectional area of the second contact part, the first contact structure is located between the first gate structure and the second gate structure, the first contact structure is in contact with a sidewall of the first gate structure and a sidewall of the second gate structure, respectively, one part of the second contact structure is located at a side of the first gate structure away from the first contact structure, and another part of the second contact structure is located at a side of the second gate structure away from the first contact structure.
A semiconductor structure, wherein the semiconductor structure comprises a substrate, and a first gate structure and a first contact structure on the substrate, the first contact structure comprises a first contact part and a second contact part, the first contact part is connected to the second contact part, and the first contact part is located between the second contact part and the substrate,
- the first contact structure is electrically connected to the first gate structure and the substrate, and sectional area of the first contact part is greater than sectional area of the second contact part;
- and
- wherein the first gate structure comprises a gate conductive layer, the first contact part is in contact with a sidewall of the gate conductive layer, and the first contact part is flush with a top surface of the gate conductive layer.
Dependencies are inferred from the claim text.