Monitoring unit and substrate treating apparatus including the same

A substrate treating apparatus which irradiates an EUV beam to a substrate, comprising:

• a monitoring unit installed in the substrate treating apparatus, and configured to monitor an EUV beam power in real time, the monitoring unit comprising:
• an optical system which filters and focuses the EUV beam;
• a detector which detects the focused, filtered EUV beam, the detector including a plurality of sensors, at least some of which are located inside a beam dump;
• a signal amplifier which amplifies an electrical signal output by the detector;
• and
• a data processor which calculates the EUV beam power based on the electrical signal.

A substrate treating apparatus comprising:

• a source which generates an EUV beam;
• a scanner which transfers a mask pattern to a substrate by using the EUV beam;
• and
• a monitoring unit which monitors an EUV beam power in real time,
• wherein the monitoring unit includes
• a detector which detects the EUV beam,
• a filter which filters the EUV beam before it reaches the detector or a mirror that concentrates the EUV beam before it reaches the detector, and
• and a data processor which calculates the EUV beam power based on an electrical signal output by the detector,
• wherein the scanner includes
• a first mirror assembly which comprises a plurality of mirrors and receives the EUV beam from the source,
• a second mirror assembly which comprises a plurality of mirrors and reflects the EUV beam reflected by the first mirror assembly to a reticle, and
• a beam dump which is disposed at the same level as the second mirror assembly and receives the EUV beam reflected by the first mirror assembly,
• wherein the detector includes at least a first sensor provided on an outer surface of the beam dump, and at least a second sensor located inside the beam dump.