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US 12,584,039 B2Granted
Slurry composition for a chemical mechanical polishing
AssigneesSK hynix Inc., Industry-University Cooperation Foundation Hanyang University
InventorsCheol Min Shin, Hyun Goo Kang, Ungyu Paik, Taeseup Song, Hojin Jeong
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Abstract
A slurry composition may include an abrasive, a solvent, and polyol. The abrasive may include any one of metal oxide, metal nitride, metal oxynitride, and a combination thereof. The polyol may have about 0.01 mM to about 500 mM of a concentration. Thus, high polishing selectivities may be provided between a B—Si layer, a TiN layer and a SiN layer by controlling a polishing rate of the TiN layer.
Claims7
A chemical mechanical polishing (CMP) method comprising:
- applying a slurry composition to a wafer;
- and
- polishing a surface of the wafer, which includes a storage node electrode, a barrier layer, and an etch stopper, using the slurry composition,
- wherein the slurry composition comprises polyol absorbed in a surface of the barrier layer by a hydrogen bond.
1 more element
Dependencies are inferred from the claim text.