Semiconductor device

A semiconductor device comprising:

• a switching element including a parallel connection circuit of a first transistor configured as a field-effect transistor and a second transistor configured as an insulated-gate bipolar transistor;
• and
• a driver circuit configured to drive the switching element according to an input control signal,
• wherein when turning the switching element from a first state to a second state, the driver circuit makes different a timing at which the first transistor turns from the first state to the second state and a timing at which the second transistor turns from the first state to the second state, and
• of the first and second states, one is an off state and another is an on state,
• wherein the driver circuit includes a control signal generation circuit configured to generate, based on the input control signal, a first control signal for controlling a state of the first transistor and a second control signal for controlling a state of the second transistor, the driver circuit driving a gate of the first transistor based on the first control signal and a gate of the second transistor based on the second control signal, and
• wherein the control signal generation circuit includes a delay circuit configured to make different a timing of a change in the first control signal based on a change in the input control signal and a timing of a change in the second control signal based on the change in the input control signal.