Electronic component and method for manufacturing electronic component
AssigneeMurata Manufacturing Co., Ltd.
InventorNoriyuki Ookawa
Life of this patent
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Abstract
An electronic component that includes: a base body; and an external electrode that covers a part of an outer surface of the base body, the external electrode including: an underlying electrode containing copper and silicon; and a metal layer that covers an outer surface of the underlying electrode, wherein at least some of the copper has copper particles with a flattening ratio of 0.5 or less, and when the underlying electrode is viewed in section, the silicon is distributed so as to fill gaps between the copper particles.
Claims18
An electronic component comprising:
- a base body;
- and
- an external electrode that covers a part of an outer surface of the base body, the external electrode comprising:
- an underlying electrode containing copper and silicon;
- and
- a metal layer that covers an outer surface of the underlying electrode, wherein
- at least some of the copper comprises copper particles with a flattening ratio of 0.5 or less, and
- when the underlying electrode is viewed in section, the silicon is distributed to fill a gap between the copper particles.
A method for manufacturing an electronic component, the method comprising:
- preparing a base body;
- applying a conductor paste containing a copper component and a silicon component to an outer surface of the base body;
- heating the base body with the conductor paste applied thereto to convert the conductor paste to an underlying electrode;
- and immersing the base body with the underlying electrode formed thereon in a plating solution to form a metal layer on an outer surface of the underlying electrode, wherein a curing onset temperature of the silicon component is higher than a sintering onset temperature of the copper component, and a difference between the curing onset temperature of the silicon component and the sintering onset temperature of the copper component is 100 degrees or less, wherein at least some of the copper comprises copper particles with a flattening ratio of 0.5 or less, and when the underlying electrode is viewed in section, the silicon is distributed to fill a gap between the copper particles.
Dependencies are inferred from the claim text.