Method for producing a nano-structured element made of hexagonal boron nitride and device comprising such an element
AssigneeETH Zurich
InventorsDavid J. Norris, Nolan Lassaline, Deepankur Thureja
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AssigneeETH Zurich
InventorsDavid J. Norris, Nolan Lassaline, Deepankur Thureja
Estimating the term…
A method is indicated for producing a nano-structured element (1) made of hexagonal boron nitride (hBN). The method comprises the steps of a.) generating a relief structure (4) in the surface (31) of a resist (3), the resist in particular being a polymer resist (3); of b.) placing the resist (3) on the hBN-element (1); and of c.) transferring the relief structure (4) from the resist (3) into the hBN-element (1) by means of etching. Furthermore, a device is indicated comprising one or several nano-structured hBN-elements (1), the one or several hBN-elements (1) having a relief structure (4) provided for the targeted influencing of the electronic, optical and/or mechanical properties of the device.
A method for producing a nano-structured element made of hexagonal boron nitride (hBN), comprising the steps of:
A device comprising one or several nano-structured elements made of hexagonal boron nidride (hBN) and having a relief structure provided for influencing the electronic properties of the device in a targeted way, wherein the relief structure of the one or several nano-structured elements is configured to modulate the electric field in a nearby active layer.
Dependencies are inferred from the claim text.